1、400-1100nm Si PD
Features:
? High Blue Sensitivity
? Low Capacitance
? Can be reverse biased
Applications:
? Spectrophotometer
? Analytical Instruments
? Fluorescence
Electrical and optical characteristics:(T=25℃)
parameter | symbol | unit | Value(Typ.) |
Active diameter | Φ | mm | 1 |
Spectral range | λ | nm | 400-1100 |
Responsivity | Re(VR=5V,λ=405nm) | mA/mW | 0.15 |
Re(VR=5V,λ=650nm) | mA/mW | 0.30 | |
Re(VR=5V,λ=850nm) | mA/mW | 0.55 | |
Re(VR=5V,λ=1064nm) | mA/mW | 0.27 | |
Response time | Tr (RL=50Ω,VR=5V) | ns | 1.4 |
Dark current | Id(VR=0V) | pA | 0.2 |
Id(VR=5V) | pA | 60 | |
Reverse Breakdown voltage | VBR (IR=10uA) | V | 80 |
Junction capacitance | Cj (f=1MHz, VR=0V) | pF | 50 |
Cj (f=1MHz, VR=5V) | pF | 6 | |
Saturated Optical Power | Ps(VR =5V) | mW | 15 |
Operating voltage | VR | V | 0-20 |
Shunt resistance | Rsh (VR=10mV) | GΩ | 50 |
Spectral Response
2、900-1700nm InGaAs PD
Features:
? High reliability, low dark current
? 900-1700nm wide wavelength range
? Hermetic package TO Can with
? receptacle or with fiber coupling
Applications:
? 
Optical sensor, Temperature sensing
? Covert IR sensing, Spectrography
? Medical and Chemical analysis
? Optical power meter, Space light detect equipment
? Light Detection , Industrial automatic control
? Science analysis and experiment
? Space light detect equipment
Absolute maximum ratings:
parameter | symbol | value | unit |
Operating temperature | Top | -40～+85 | ℃ |
Storage temperature | Tstg | -40～+100 | ℃ |
Forward current | If | 10 | mA |
Reverse voltage | Vr | 10 | V |
Soldering temperature(time) | Ts（10s） | 260 | ℃ |
Electrical and optical characteristics:(T=25℃)
parameter | symbol | unit | Value（typ.） |
Active diameter | Φ | mm | 1 |
Spectral range | λ | nm | 900-1700 |
Responsivity | Re(VR=0V,λ=405nm) | mA/mW | 0.12 |
Re(VR=0V,λ=1330nm) | mA/mW | 0.68 | |
Re(VR=0V,λ=1550nm) | mA/mW | 0.90 | |
Response time | Tr (RL=50Ω,VR=5V) | ns | 5 |
Dark current | Id(VR=0V) | nA | 0.05 |
Id(VR=5V) | nA | 1 | |
Reverse Breakdown voltage | VBR (IR=10uA) | V | 30 |
Junction capacitance | Cj (f=1MHz, VR=0V) | pF | 110 |
Cj (f=1MHz, VR=5V) | pF | 35 | |
Saturated Optical Power | Ps(VR =5V) | mW | 10 |
Operating voltage | VR | V | 0-5 |
Shunt resistance | Rsh (VR=10mV) | MΩ | 200 |
package | Hermetic package TO Can | | |
Spectral Response
3、1100-2600nm Extended InGaAs PD
Features:
? Key Features Include the Following:
? Peak sensitivities from 1.05 A/W to 1.45 A/W
? High dynamic range
? High linearity
? Low temperature coefficient of the sensitivity of up to 0.01%/K
Applications:
? Spectroscopy (and NIR-FTIR in particular)
? Laser monitoring
? Non-contact temperature measurement
? Tunable diode laser spectroscopy (TDLAS)
? Spectrophotometry, e.g. for measuring moisture
Electrical and optical characteristics:(T=25℃)
parameter | symbol | unit | Value（typ.） |
Active diameter | Φ | mm | 1 |
Spectral range | λ | nm | 1100-2600 |
Responsivity | Re (VR=0.1V,λ=850nm ) | mA/mW | 0.21 |
Re (VR=0.1V,λ=1310nm ) | mA/mW | 0.45 | |
Re(VR=0.1V,λ=2300nm) | mA/mW | 1.3 | |
Re(VR=0.1V,λ=2600nm) | mA/mW | 0.23 | |
Response time | Tr (RL=50Ω, VR=0.1V) | ns | 25 |
Dark current | ID(VR=0V) | uA | 0.3 |
ID(VR=0.1V) | uA | 1 | |
Reverse Breakdown voltage | VBR (IR=10uA) | V | 1 |
Junction capacitance | Cj (f=1MHz, VR=0V) | pF | 150 |
Cj (f=1MHz, VR=0.1V) | pF | 130 | |
Saturated Optical Power | Ps(VR =0.1V) | mW | 8 |
Operating voltage | VR | V | 0-0.1 |
Shunt impedance | Rsh (VR=10mV) | KΩ | 15 |
Spectral Response
4、Detector modules
Specifications |
PN# | FJRX-Si-M | FJRX-IGA-M |
Detector Type | Si/PIN | InGaAs/PIN |
Wavelength Range | 320 - 1000 nm | 800 - 1700 nm |
Max Responsivity (Typical) | 0.53 A/W | 1.0 A/W |
Active Detector Diameter | 0.8 mm | 0.3 mm |
Monitor Output Bandwidth | DC – 100/200/300MHz |
Common Mode Rejection Ratio | >25 dB |
Transimpedance Gain | 103, 104, 105 V/A |
Optical Inputs | FC/PC or FC/APC Compatible (Removable Adapter) |
Package
